Semiconductor package device and method of manufacturing the same

ABSTRACT

A semiconductor package device includes a first substrate, a second substrate and a first spacer. The first substrate includes a first divided pad. The second substrate includes a second divided pad disposed above the first divided pad. The first spacer is disposed between the first divided pad and the second divided pad. The first spacer is in contact with the first divided pad and the second divided pad.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No. 15/884,313 filed Jan. 30, 2018, which application claims the benefit of and priority to U.S. Provisional Application No. 62/456,553, filed Feb. 8, 2017, the contents of which are incorporated herein by reference in its entirety.

BACKGROUND 1. Technical Field

The present disclosure relates generally to a semiconductor package device and a method of manufacturing the same, and to a semiconductor package device including an antenna structure and a method of manufacturing the same.

2. Description of the Related Art

The development of mobile communication has caused demand for high data rates and stable communication quality, and high frequency wireless transmission (e.g., 28 GHz or 60 GHz) has become one of the most important topics in the mobile communication industry. In order to achieve such high frequency wireless transmission, the signal can be transmitted in a band having wavelengths from about ten to about one millimeter (“millimeter wave,” or “mmWave”). However, the signal attenuation is one of the problems in millimeter wave transmission.

SUMMARY

In one or more embodiments, according to one aspect, a semiconductor package device includes a first substrate, a second substrate and a first spacer. The first substrate includes a first divided pad. The second substrate includes a second divided pad disposed above and facing toward the first divided pad. The first spacer is disposed between the first divided pad and the second divided pad. The first spacer is in contact with the first divided pad and the second divided pad.

In one or more embodiments, according to another aspect, a semiconductor package device includes a first substrate, a second substrate and at least two spacers. The first substrate includes a first pad. The second substrate includes a second pad disposed above and facing toward the first pad. At least two spacers are disposed between the first pad and the second pad.

In one or more embodiments, according to another aspect, a method of manufacturing a semiconductor package device includes (a) providing a first substrate, the first substrate including a first set of pads; (b) disposing a plurality of spacers on the first set of pads, wherein at least two of the spacers are disposed on a first pad of the first set of pads; and (c) disposing a second substrate on the first substrate, the second substrate including a second set of pads respectively disposed above the first set of pads, wherein a second pad of the second set of pads is disposed on the at least two of the spacers.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawings. It is noted that various features may not be drawn to scale, and the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a cross-sectional view of a semiconductor package device in accordance with some embodiments of the present disclosure.

FIG. 2 illustrates a top view of a substrate strip including a substrate shown in FIG. 1 in accordance with some embodiments of the present disclosure.

FIG. 3A illustrates a cross-sectional view of a support structure in FIG. 1 in accordance with some embodiments of the present disclosure.

FIG. 3B illustrates a cross-sectional view of the support structure in FIG. 1 in accordance with some embodiments of the present disclosure.

FIG. 4 illustrates a cross-sectional view of the support structure in FIG. 1 in accordance with some embodiments of the present disclosure.

FIG. 5A, FIG. 5B, FIG. 5C, FIG. 5D and FIG. 5E illustrate a method of manufacturing a semiconductor package device in accordance with some embodiments of the present disclosure.

FIG. 6 illustrates a cross-sectional view of a semiconductor package device in accordance with some embodiments of the present disclosure.

FIG. 7 illustrates a cross-sectional view of a semiconductor package device in accordance with some embodiments of the present disclosure.

FIG. 8A and FIG. 8B illustrate a method of manufacturing a semiconductor package device in accordance with some embodiments of the present disclosure.

FIG. 9 illustrates a cross-sectional view of a semiconductor package device in accordance with some embodiments of the present disclosure.

FIG. 10A, FIG. 10B, FIG. 10C and FIG. 10D illustrate a method of manufacturing a semiconductor package device in accordance with some embodiments of the present disclosure.

Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar elements. The present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.

DETAILED DESCRIPTION

FIG. 1 illustrates a cross-sectional view of a semiconductor package device 1 in accordance with some embodiments of the present disclosure. The semiconductor package device 1 includes substrates 10, 11, support structures 13 a, 13 b, an electronic component 14, and antenna patterns 15 a, 15 b, 15 c.

The substrate 10 may be, for example, a printed circuit board, such as a paper-based copper foil laminate, a composite copper foil laminate, or a polymer-impregnated glass-fiber-based copper foil laminate. The substrate 10 may include an interconnection structure 10 r, such as a redistribution layer (RDL) or a grounding element. In some embodiments, the substrate 10 may be a single-layer substrate or multi-layer substrate which includes a core layer and a conductive material and/or structure disposed on an upper surface and a bottom surface of the substrate 10. The conductive material and/or structure may include a plurality of traces.

In some embodiments, a surface 101 of the substrate 10 is referred to as a top surface or a first surface and a surface 102 of the substrate 10 is referred to as a bottom surface or a second surface. In some embodiments, the substrate 10 may include a plurality of conductive pads (e.g., 10 p 1, 10 p 2) or solder bumps 10 b on its first surface 101 and/or second surface 102. In some embodiments, the conductive pads include a divided conductive pad 10 p 1 and a non-divided conductive pad 10 p 2. For example, as shown in FIG. 2, which illustrates a top view of a substrate strip including the substrate 10 before a singulation process, the divided conductive pad 10 p 1 is formed after the singulation process to cut through a conductive pad 10 p 1′ that is located at a scribe line (or cut line) 101. In addition, as shown in FIG. 2, the non-divided conductive pad 10 p 2 is not located at the scribe line during the singulation process, and thus the non-divided conductive pad 10 p 2 has not been divided. In one or more embodiments, the divided conductive pad 10 p 1 may be about 0.9 or less, about 0.8 or less, about 0.7 or less, about 0.6 or less, or about 0.5 or less times as wide as is the non-divided conductive pad 10 p 2.

The antenna pattern 15 a is disposed on the first surface 101 of the substrate 10. In some embodiments, the antenna pattern 15 a includes a plurality of antenna elements. For example, the antenna pattern 15 a may include an array of antenna elements. In some embodiments, the antenna 15 a may include an N×N array of antenna elements, where N is an integer greater than 1.

The electronic component 14 is disposed on the second surface 102 of the substrate. In some embodiments, the electronic component 14 is electrically connected to the antenna pattern 15 a through the interconnection structure 10 r within the substrate 10. The electronic component 14 may be a chip or a die including a semiconductor substrate, one or more integrated circuit devices and one or more overlying interconnection structures therein. The integrated circuit devices may include active devices such as transistors and/or passive devices such resistors, capacitors, inductors, or a combination thereof. The electronic component 14 may be electrically connected to the substrate 10 (e.g., to the conductive pads), and electrical connection may be attained by way of flip-chip or wire-bond techniques.

The substrate 11 is disposed over the substrate 10 and spaced apart from the substrate 10. In some embodiments, the substrate 11 can be the same as or different from the substrate 10 depending on design specifications. In some embodiments, a surface 111 of the substrate 11 is referred to as a top surface or a first surface and a surface 112 of the substrate 11 is referred to as a bottom surface or a second surface. In some embodiments, the substrate 11 may include a plurality of conductive pads (e.g., 11 p 1, 11 p 2) on its first surface 111 and/or second surface 112. In some embodiments, similar to the conductive pads 10 p 1, 10 p 2 of the substrate 10, the substrate 11 includes a divided conductive pad 11 p 1 and a non-divided conductive pad 11 p 2. The divided conductive pad 11 p 1 is disposed corresponding to (e.g. above) the divided conductive pad 10 p 1, and the non-divided conductive pad 11 p 2 is disposed corresponding to (e.g. above) the non-divided conductive pad 10 p 2. For example, the divided conductive pad 10 p 1 may be aligned with the divided conductive pad 11 p 1 and the non-divided conductive pad 10 p 2 may be aligned with the non-divided conductive pad 11 p 2. In one or more embodiments, the divided conductive pad 11 p 1 may be about 0.9 or less, about 0.8 or less, about 0.7 or less, about 0.6 or less, or about 0.5 or less times as wide as is the non-divided conductive pad 11 p 2.

The support structures 13 a, 13 b are disposed between the substrate 10 and the substrate 11 to separate the substrate 10 and the substrate 1 land define a cavity (e.g. an air cavity) or cavities there between. In some embodiments, the support structure 13 a is disposed between the divided conductive pads 10 p 1 and 11 p 1 and in contact with the divided conductive pads 10 p 1 and 11 p 1. The support structure 13 b is disposed between the non-divided conductive pads 10 p 2 and 11 p 2 and in contact with the non-divided conductive pads 10 p 2 and 11 p 2.

The antenna pattern 15 c is disposed on the first surface 111 of the substrate 11. The antenna pattern 15 b is disposed on the second surface 112 of the substrate 11 corresponding to (e.g. disposed above) the antenna pattern 15 a disposed on the first surface 101 of the substrate 10. For example, the antenna pattern 15 b faces toward the antenna pattern 15 a. For example, the antenna pattern 15 b may be aligned with the antenna pattern 15 a. In some embodiments, the antenna pattern 15 b or 15 c includes a plurality of antenna elements. For example, the antenna pattern 15 b or 15 c may include an array of antenna elements. In some embodiments, the antenna pattern 15 b or 15 c may include an N×N array of antenna elements, where N is an integer greater than 1. In some embodiments, one of the antenna pattern 15 b and the antenna pattern 15 c can be omitted depending on design specifications.

As shown in FIG. 1, since the support structures 13 a, 13 b are disposed between the substrates 10 and 11 to define an air cavity, a gain, bandwidth and radiation efficiency of the antenna patterns 15 a, 15 b and 15 c can be improved by promoting resonance between the antenna pattern 15 a and the antenna pattern 15 b. To attain a desired level of resonance, a height H11 of the air cavity (e.g. a distance between the antenna pattern 15 a and the antenna pattern 15 b) and a tolerance of the height H11 can be controlled within a certain range. For example, the height H11 of the air cavity can be 250 micrometers (μm) with a tolerance about ±25 μm, or of ±about 22 μm, or of ±about 19 μm.

In some comparative implementations, the support structures 13 a, 13 b can be implemented by solder (e.g. by using solder bumps). However, the dimension of the solder bumps (e.g. a height) may decrease after every reflow process. Therefore, it can be difficult to control the size of each solder bump after the reflow processes, and to control the uniformity of all the solder bumps (which can be desirable). Therefore, a large tolerance may exist for the solder bumps. For example, it may be desirable to have a height of the solder bumps correspond to the height H11, and the above-described issues may yield a range of variation greater than a desired range of variation (such as ±about 30 μm or greater), which can decrease the efficiency of the resonance of the antenna patterns.

In some comparative implementations, the support structures 13 a, 13 b can be implemented by spacers. For example, a spacer is disposed between a conductive pad of the substrate 10 and a corresponding conductive pad of the substrate 11. However, a spacer may be divided into many pieces (e.g., two or four pieces) after a singulation process if the spacer is disposed on the conductive pad that is located at the scribe line 101 as shown in FIG. 2. Since the divided spacer can have a relatively weak strength, it may be unable to provide a stable support between the substrates 10 and 11, which can be helpful in controlling the distance between the substrates 10 and 11 (e.g., controlling the height H11 of the air cavity). Further, in some embodiments, due to variations of the singulation process, the divided spacer may not be in contact with the substrate 10 and/or 11, which may affect the function of the spacer to provide a support between the substrates 10 and 11.

FIG. 3A illustrates a cross-sectional view of the support structure 13 a in FIG. 1 in accordance with some embodiments of the present disclosure. The support structure 13 a includes a spacer 13 a 1 and an adhesive layer 13 a 2 covering at least a portion of the spacer 13 a 1. Insulating layers 10 s and 11 s are also provided. The spacer 13 a 1 is disposed between the divided conductive pads 10 p 1 and 11 p 1 and in contact with a portion of the divided conductive pad 10 p 1 and a portion of the divided conductive pad 11 p 1 that is not covered by the insulating layers 10 s and 11 s. For example, a distance between the divided pads 10 p 1 and 11 p 1 is substantially equal to a height of the spacer 13 a 1. The adhesive layer 13 a 2 is disposed between the divided conductive pads 10 p 1 and 11 p 1 and in contact with the divided conductive pads 10 p 1 and 11 p 1. The adhesive layer 13 a 2 covers a portion of the spacer 13 a 1 that is not in contact with the divided pads 10 p 1 and 11 p 1. In some embodiments, the adhesive layer 13 a 2 includes solder and/or copper paste. In some embodiments, the spacer 13 a 1 includes a copper-cored ball or bump and/or a polymer ball or bump. In some embodiments, a material of the spacer 13 a 1 is chosen so that a melting point of the spacer 13 a 1 is higher than a temperature of a reflow process for the spacer 13 a 1.

In some embodiments, a roughness of a surface 10 p 11 (also referred to as “lateral surface”) of the divided conductive pad 10 p 1 is different from that of a surface 10 p 12 (also referred to as “top surface”) of the divided conductive pad 10 p 1. The lateral surface 10 p 11 of the divided conductive pad 10 p 1 may be substantially perpendicular to the top surface 10 p 12 of the divided conductive pad 10 p 1. For example, the roughness of the lateral surface 10 p 11 of the divided conductive pad 10 p 1 may be about 1.3 times or greater, about 1.5 times or greater, or about 1.8 times or greater than the roughness of the top surface 10 p 12 of the divided conductive pad 10 p 1. In some embodiments, the surface 10 p 11 of the divided conductive pad 10 p 1 is substantially coplanar with a lateral surface 103 of the substrate 10. In some embodiments, a roughness of a surface 11 p 11 (also referred to as “lateral surface”) of the divided conductive pad 11 p 1 is different from that of a surface 11 p 12 (also referred to as “bottom surface”) of the divided conductive pad 11 p 1. The lateral surface 11 p 11 of the divided conductive pad 11 p 1 may be substantially perpendicular to the top surface 11 p 12 of the divided conductive pad 11 p 1. For example, the roughness of the lateral surface 11 p 11 of the divided conductive pad 11 p 1 may be about 1.3 times or greater, about 1.5 times or greater, or about 1.8 times or greater than the roughness of the top surface 11 p 12 of the divided conductive pad 11 p 1. In some embodiments, the surface 11 p 11 of the divided conductive pad 11 p 1 is substantially coplanar with a lateral surface of the substrate 11.

In some embodiments, the support structure 13 a may include more than one spacer. For example, the support structure 13 a may include N spacers, where N is greater than 1. In some embodiments, as shown in FIG. 3B, the support structure 13 a may include at least one spacer 13 a 1 that has not been divided during a singulation process and a divided spacer 13 a 3. A width of the divided spacer 13 a 3 may be, for example, about 0.9 or less, about 0.8 or less, about 0.7 or less, about 0.6 or less, or about 0.5 or less times that of the spacer 13 a 1. For example, a portion of the divided spacer 13 a 3 is removed. In some embodiments, a lateral, divided surface 13 a 31 of the divided spacer 13 a 3 is substantially coplanar with the lateral surfaces 10 p 11 and 11 p 11 of the divided conductive pads 10 p 1 and 11 p 1. By disposing at least one entire spacer (e.g., non-divided spacer or a spacer that has not been divided during the singulation process) between two corresponding divided conductive pads (e.g., the divided conductive pads 10 p 1 and 11 p 1), the support structure 13 a between the substrates 10 and 11 can be reinforced, so as to precisely control a distance between the substrates 10 and 11.

FIG. 4 illustrates a cross-sectional view of the support structure 13 b in FIG. 1 in accordance with some embodiments of the present disclosure. The support structure 13 b includes one or more spacers 13 b 1 and an adhesive layer 13 b 2 covering at least a portion of the spacers 13 b 1. Insulating layers 10 s 1 and 11 s 1 are also provided. The spacers 13 b 1 are disposed between the non-divided conductive pads 10 p 2 and 11 p 2 and in contact with a portion of the non-divided conductive pad 10 p 2 and a portion of the non-divided conductive pad 11 p 2 that is not covered by the insulating layers 10 s 1 and 11 s 1. For example, a distance between the non-divided pads 10 p 2 and 11 p 2 is substantially equal to a height of each of the spacers 13 b 1. The adhesive layer 13 b 2 is disposed between the non-divided conductive pads 10 p 2 and 11 p 2 and in contact with the non-divided conductive pads 10 p 2 and 11 p 2. The adhesive layer 13 b 2 covers a portion of the spacers 13 b 1 that is not in contact with the non-divided pads 10 p 2 and 11 p 2. In some embodiments, the adhesive layer 13 b 2 includes solder and/or copper paste. In some embodiments, the spacers 13 b 1 include a copper-cored ball or bump and/or a polymer ball or bump. In some embodiments, the material of the spacers 13 b 1 is chosen so that a melting point of the spacers 13 b 1 is higher than a temperature of a reflow process for the spacers 13 b 1.

FIG. 5A, FIG. 5B, FIG. 5C, FIG. 5D and FIG. 5E are cross-sectional views of a semiconductor structure at various stages of fabrication, in accordance with some embodiments of the present disclosure. Various figures have been simplified to provide a better understanding of the aspects of the present disclosure. In some embodiments, the structures shown in FIG. 5A, FIG. 5B, FIG. 5C, FIG. 5D and FIG. 5E are used to manufacture the support structures 13 a, 13 b shown in FIG. 1, FIG. 3A and FIG. 3B.

Referring to FIG. 5A, a substrate 10 having an antenna pattern 15 a and conductive pads 10 p 1′ and 10 p 2 is provided. The substrate 10 includes an insulation layer 10 s (e.g., a solder mask) covering a portion of the conductive pads 10 p 1′ and 10 p 2. As shown in FIG. 5A, one or more recesses are defined by the insulation layer 10 s and the conductive pads 10 p 1′ and 10 p 2.

Referring to FIG. 5B, a paste 53 (or soldering paste) is formed within the one or more recesses defined by the insulation layer 10 s and the conductive pads 10 p 1′ and 10 p 2. In some embodiments, the paste 53 includes a plurality of spacers 53 a and an adhesive layer 53 b covering the spacers 53 a. In some embodiments, a total volume of the spacers 53 a is more than about 2% of a volume of the paste 53 (e.g. about 3% or more of the volume of the paste 53, about 4% or more of the volume of the paste 53, or about 5% or more of the volume of the paste 53), and a total volume of the adhesive layer 53 b is less than about 98% of the volume of the paste 53 (e.g. about 97% or less of the volume of the paste 53, about 96% or less of the volume of the paste 53, or about 95% or less of the volume of the paste 53).

In some embodiments, the paste 53 can be formed by printing process. For example, as shown in FIG. 5C, a stencil 59 is disposed on the insulation layer 10 s. The stencil 59 defines an opening corresponding to at least one of the one or more recesses defined by the insulation layer 10 s and the conductive pads 10 p 1′ and 10 p 2. A size (e.g. a width) of each of the spacers 53 a is less than a diameter of the opening of the stencil 59 (e.g. a ratio of the diameter of the opening of the stencil 59 to a diameter of each respective spacer 53 a is at least equal to or greater than about 6.8 times the size of each spacer 53 a, such as about 7.8 or more times larger than the size of each spacer 53 a, about 9.8 or more times larger than the size of each spacer 53 a, or greater), and is less than a diameter of the one or more recesses defined by the insulation layer 10 s and the conductive pads 10 p 1′ and 10 p 2 (e.g. the size of each of the spacers 53 a is less than about 0.5 times the diameter of the one or more recesses defined by the insulation layer 10 s and the conductive pads 10 p 1′ and 10 p 2, less than about 0.4 times the diameter of the one or more recesses defined by the insulation layer 10 s and the conductive pads 10 p 1′ and 10 p 2, or less than about 0.3 times the diameter of the one or more recesses defined by the insulation layer 10 s and the conductive pads 10 p 1′ and 10 p 2), and each recess may accommodate a plurality of spacers 53 a.

Referring to FIG. 5D, a substrate 11 is disposed over the substrate 10 and in contact with the paste 53. The substrate 11 includes antenna patterns 15 b and 15 c corresponding to the antenna pattern 15 a. The substrate 11 has conductive pads 11 p 1′ and 11 p 2 corresponding to the conductive pads 10 p 1′ and 10 p 2. The paste 53 is in contact with a portion of the conductive pads 11 p 1′ and 11 p 2 that is not covered by the insulation layer 11 s. Then, the paste 53 is heated to form the support structure 13 as shown in FIG. 1. For example, the spacers 53 a, the adhesive layer 53 b, the substrates 10, 11 and the conductive pads 10 p 1′, 10 p 2, 11 p 1′ and 11 p 2 are cured.

Referring to FIG. 5E, a singulation process is carried out to separate out individual semiconductor package devices. That is, the singulation is performed through a substrate strip including the substrates 10, 11. The singulation is also performed through the conductive pads 10 p 1′ and 11 p 1′ to form divided conductive pads 10 p 1 and 11 p 1. The singulation may be performed, for example, by using a dicing saw, laser or other appropriate cutting technique.

FIG. 6 shows a semiconductor package device 6 according to some embodiments of the present disclosure. The semiconductor package device 6 includes a substrate 10, an antenna pattern 15 a disposed on the substrate 10, a substrate 11, an antenna layer 15 c disposed on the substrate 11, and a stand-off (or other support) structure 530 disposed between the substrate 10 and the substrate 11 to define an air cavity therebetween. In some embodiments, the stand-off structure 530 includes an array of polymer spacers along with an adhesive (e.g., an epoxy resin or other resin) to provide adhesion to the substrate 10 and the substrate 11. Advantages of the semiconductor package device 6 include a well-controlled air cavity height, such as where a height of the polymer spacers can be controlled to 250 μm±10 μm (e.g. to 250 μm±8 μm, or 250 μm±6 μm), and high-throughput placement of the polymer spacers and the adhesive by a dispensing process. The polymer spacers and the adhesive are disposed in gaps between regions of the antenna pattern 15 a, and cross-sectional widths of the polymer spacers and the adhesive vary according to different widths of the gaps. In some embodiment, the semiconductor package device 6 further includes an adhesive material formed on the substrate 10 around the polymer spacers.

In some embodiments, the stand-off structure 530 may include an array of polymer spacers along with a die attach film (DAF) to provide adhesion to the substrate 10 and the substrate 11. Advantages of the use of the DAF as the stand-off structure 530 include a well-controlled air cavity height, such as where a height of the polymer spacers can be controlled to 250 μm±10 μm (e.g. to 250 μm±8 μm, or 250 μm±6 μm), and a low degree of bleeding of a material of the DAF to mitigate against contamination of the antenna pattern 15 a. The polymer spacers and the DAF are disposed in gaps between regions of the antenna pattern 15 a, and cross-sectional widths of the polymer spacers and the DAF varies according to different widths of the gaps.

In some embodiments, the stand-off structure 530 may include an array of polymer cores surrounded by a solder to provide adhesion to the substrate 10 and the substrate 11. Advantages of the use of the polymer cores surrounded by the solder include a well-controlled air cavity height, such as where a height of the polymer cores can be controlled to 250 μm±10 μm (e.g. to 250 μm±8 μm, or 250 μm±6 μm), and high-throughput placement of the polymer cores and the solder by a ball or bump mounting process. The polymer cores and the solder are disposed in gaps between regions of the antenna pattern 15 a, and cross-sectional widths of the polymer cores and the solder vary according to different widths of the gaps.

In some embodiments, the stand-off structure 530 may include an array of conductive posts (e.g., copper (Cu) pillars) and a solder to provide adhesion. Advantages of the use of the conductive posts include a well-controlled air cavity height, such as where a height of the conductive posts can be controlled to 250 μm±10 μm (e.g. to 250 μm±8 μm, or 250 μm±6 μm), and high-throughput manufacturing by a solder paste printing process. The conductive posts are disposed in gaps between regions of the antenna pattern 15 a, and cross-sectional widths of the conductive posts vary according to different widths of the gaps.

FIG. 7 illustrates a semiconductor package device 7 according to some embodiments of the present disclosure. The semiconductor package device 7 includes a substrate 70 including a base portion 70 a and an extension portion 70 b protruding upwardly from the base portion 70 a, an antenna pattern 15 a disposed on the substrate 10, a substrate 11 disposed on the extension portion 70 b of the substrate 70 via a solder paste 71 to define an air cavity between the substrate 70 and the substrate 11, and an antenna layer 15 c disposed on the substrate 11. Advantages of the semiconductor package device 7 include a well-controlled air cavity height, such as where the height of the cavity can be controlled to 250 μm±10 μm (e.g. to 250 μm±8 μm, or 250 μm±6 μm), and a low degree of bleeding of a material of the extension portion to mitigate against contamination of the antenna pattern 15 a. In some embodiments, the semiconductor package device 7 further includes an adhesive material formed on the substrate 70 around the extension portion 70 b of the substrate 70.

FIG. 8A and FIG. 8B are cross-sectional views of a semiconductor structure at various stages of fabrication, in accordance with some embodiments of the present disclosure. Various figures have been simplified to provide a better understanding of the aspects of the present disclosure. In some embodiments, the structures shown in FIG. 8A and FIG. 8B are used to manufacture the semiconductor package device 7 shown in FIG. 7.

Referring to FIG. 8A, the substrate 70 including the base portion 70 a and the extension portion 70 b protruding upwardly from the base portion 70 a. The antenna pattern 15 a is formed on the substrate 10. A printing process is performed on the extension portion 70 b of the substrate 70 to apply the solder paste 71.

Referring to FIG. 8B, the substrate 11 (e.g. already singulated) is disposed on the extension portion 70 b of the substrate 70 by a pick and place tool, and a solder reflow process is performed to form the semiconductor package device 7 shown in FIG. 7. Although the cavity is shown as being formed in the substrate 70, in other embodiments the cavity can be formed in the substrate 11.

FIG. 9 illustrates a semiconductor package device 9 according to some embodiments of the present disclosure. The semiconductor package device 9 includes a substrate 10, an antenna pattern 15 a disposed on the substrate 10, a substrate 90 including a base portion 90 a and an extension portion 90 b protruding downwardly from the base portion 90 a and disposed on the substrate 10 to define an air cavity between the substrate 10 and the substrate 90, an adhesive 91 (e.g., an epoxy resin or other resin) to provide adhesion between the substrate 10 and the substrate 90, and an antenna layer 15 c disposed on the substrate 90. In some embodiments, the substrate 90 can be formed of, or can include, glass, silicon, or other dielectric material having a low dielectric constant. In some embodiments, a solder can be used in place of, or in conjunction with, the adhesive 91. Advantages of the semiconductor package device 9 include a well-controlled air cavity height, such as where the height of the cavity can be controlled to 250 μm±10 μm (e.g. to 250 μm±8 μm, or 250 μm±6 μm), and a low degree of bleeding of a material of the extension portion 90 b to mitigate against contamination of the antenna pattern 15 a. In some embodiments, the semiconductor package device 9 further includes an adhesive material formed on the substrate 10 around the extension portion 90 b of the substrate 90.

FIG. 10A, FIG. 10B, FIG. 10C and FIG. 10D are cross-sectional views of a semiconductor structure at various stages of fabrication, in accordance with some embodiments of the present disclosure. Various figures have been simplified to provide a better understanding of the aspects of the present disclosure. In some embodiments, the structures shown in FIG. 10A, FIG. 10B, FIG. 10C and FIG. 10D are used to manufacture the semiconductor package device 9 shown in FIG. 9.

Referring to FIG. 10A, a substrate 90′ is provided and the antenna pattern 15 c is formed on a surface 901 of the substrate 90′. In some embodiments, the substrate 90′ can be formed of, or can include, glass, silicon, or other material having a low dielectric constant.

Referring to FIG. 10B, cavities 90 h are formed in a surface 902 of the substrate 90′ into the substrate 90, such as by etching or other removal processes.

Referring to FIG. 10C, the substrate 90′ is singulated to form individual substrates 90 including the base portion 90 a and the extension portion 90 b.

Referring to FIG. 10D, the substrate 10 including the antenna layer 15 a formed thereon is provided. The adhesive 91 is disposed on the substrate 10, such as by a printing process or other dispensing process. The substrate 90 formed in the operation shown in FIG. 10C is disposed on the substrate 10 by a pick and place tool. Then the adhesive 91 is cured, such as by applying ultraviolet radiation or heat, to form the semiconductor package device 9 shown in FIG. 9.

As used herein, the terms “approximately,” “substantially,” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation. For example, when used in conjunction with a numerical value, the terms can refer to a range of variation less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two numerical values can be deemed to be “substantially” or “about” the same if a difference between the values is less than or equal to ±10% of an average of the values, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, “substantially” parallel can refer to a range of angular variation relative to 0° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, “substantially” perpendicular can refer to a range of angular variation relative to 90° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

Two surfaces can be deemed to be coplanar or substantially coplanar if a displacement between the two surfaces is no greater than 5 μm, no greater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm.

As used herein, the terms “conductive,” “electrically conductive” and “electrical conductivity” refer to an ability to transport an electric current. Electrically conductive materials typically indicate those materials that exhibit little or no opposition to the flow of an electric current. One measure of electrical conductivity is Siemens per meter (S/m). Typically, an electrically conductive material is one having a conductivity greater than approximately 10⁴ S/m, such as at least 10⁵ S/m or at least 10⁶ S/m. The electrical conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the electrical conductivity of a material is measured at room temperature.

As used herein, the singular terms “a,” “an,” and “the” may include plural referents unless the context clearly dictates otherwise. In the description of some embodiments, a component provided “on” or “over” another component can encompass cases where the former component is directly on (e.g., in physical contact with) the latter component, as well as cases where one or more intervening components are located between the former component and the latter component.

While the present disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations do not limit the present disclosure. It can be clearly understood by those skilled in the art that various changes may be made, and equivalent components may be substituted within the embodiments without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not necessarily be drawn to scale. There may be distinctions between the artistic renditions in the present disclosure and the actual apparatus, due to variables in manufacturing processes and such. There may be other embodiments of the present disclosure which are not specifically illustrated. The specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein have been described with reference to particular operations performed in a particular order, it can be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the present disclosure. Therefore, unless specifically indicated herein, the order and grouping of the operations are not limitations of the present disclosure. 

What is claimed is:
 1. A semiconductor package device, comprising: a first substrate including a first pad; a second substrate including a second pad disposed above the first pad; a first spacer disposed between the first pad and the second pad; and an adhesive layer covering the first spacer and in contact with the first pad and the second pad.
 2. The semiconductor package device of claim 1, wherein the first pad and the second pad are truncated pads.
 3. The semiconductor package device of claim 1, wherein the first pad has a top surface facing the second pad and a lateral surface substantially perpendicular to the top surface, and a roughness of the top surface of the first pad is different from a roughness of the lateral surface of the first pad.
 4. The semiconductor package device of claim 1, wherein a lateral surface of the first pad is substantially coplanar with a lateral surface of the first substrate, and a lateral surface of the second pad is substantially coplanar with a lateral surface of the second substrate.
 5. The semiconductor package device of claim 1, further comprising a second spacer disposed between the first pad and the second pad, wherein a width of the second spacer is smaller than a width of the first spacer.
 6. The semiconductor package device of claim 5, wherein the second spacer has a truncated surface substantially coplanar with a lateral surface of the first pad or a lateral surface of the second pad.
 7. The semiconductor package device of claim 1, wherein a distance between the first pad and the second pad is substantially equal to a height of the first spacer.
 8. The semiconductor package device of claim 1, further comprising: a first insulating layer disposed on the first pad and exposing a portion of the first pad; and a second insulating layer disposed on the second divided pad and exposing a portion of the second pad, wherein the first insulating layer or the second insulating layer is in contact with the adhesive layer.
 9. The semiconductor package device of claim 1, further comprising: a first insulating layer disposed on the first pad and exposing a portion of the first pad; and a second insulating layer disposed on the second divided pad and exposing a portion of the second pad, wherein the first insulating layer or the second insulating layer is spaced apart from the adhesive layer.
 10. A semiconductor package device, comprising: a first substrate including a first pad; a second substrate including a second pad disposed corresponding to the first pad; and a support structure disposed between the first pad and the second pad, wherein a lateral surface of the support structure is substantially coplanar with a lateral surface of the first pad of the first substrate and a lateral surface of the second pad of the second substrate.
 11. The semiconductor package device of claim 10, wherein the first pad and the second pad are truncated pads.
 12. The semiconductor package device of claim 10, wherein the first pad has a top surface facing the second pad and a lateral surface substantially perpendicular to the top surface, and a roughness of the top surface of the first pad is different from a roughness of the lateral surface of the first pad.
 13. The semiconductor package device of claim 10, wherein the support structure includes a spacer, an adhesive layer or a combination thereof.
 14. The semiconductor package device of claim 10, wherein a distance between the first pad and the second pad is substantially equal to a height of the support structure.
 15. The semiconductor package device of claim 10, wherein a melting point of the support structure is higher than a temperature of a reflow process for the support structure.
 16. A semiconductor package device, comprising: a first substrate including a first truncated pad; a second substrate including a second truncated pad disposed corresponding to the first truncated pad; and a support structure disposed between the first truncated pad and the second truncated pad.
 17. The semiconductor package device of claim 16, wherein the first truncated pad has a top surface facing the second truncated pad and a lateral surface substantially perpendicular to the top surface, and a roughness of the top surface of the first truncated pad is different from a roughness of the lateral surface of the first truncated pad.
 18. The semiconductor package device of claim 16, wherein the support structure includes a spacer, an adhesive layer or a combination thereof.
 19. The semiconductor package device of claim 16, wherein a melting point of the support structure is higher than a temperature of a reflow process for the support structure.
 20. The semiconductor package device of claim 16, wherein the support structure is in contact with the first truncated pad and the second truncated pad. 